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0100CT 2N1552 180CA 4742A 121NQ 100SG C102M N5400
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  1n5221b - 1n5263b 0.5w hermetically sealed glass zener diodes pb rohs compliance rohs compliance do-35 features ? zener voltage range 2.4 to 56 volts ? do-35 package (jedec) ? through-hole device type mounting ? hemetically sealed glass ? compression bonded construction ? all extermal surface are corrosion resistant and leads are readily solderable ? rohs compliant ? solder hot dip tin(sn) lead finish ? cathode indicated by polarity band dimensions is inches and (millimeters) maximum ratings and electrical characteristics rating at 25 o cambient temperature unless otherwise specified. type number symbol value units power dissipation pd 500 mw forward voltage @ if=200ma v f 1.1 v operating and storage temperature range t j , t stg -65 to + 200 o c version: a07
ratings and characteristic curves (1n5221b thru 1n5263b) figure 1. thermal resistance vs. lead length figure 2. typical change of work ing voltage under operating conditions at t amb = 25 c 95 9611 0 5 10 15 0 100 200 300 400 500 20 ll r thja - therm. resist. j unction ambient (k/w) i - lead length (mm) t l = constant 10 15 20 1 10 100 1000 v z - voltage change (m v) v z - z-voltage (v) 25 95 9598 t j = 25 c i z = 5 ma 0 5 figure 3. typical change of working voltage vs. junction temperature figure 4. total power dissipat ion vs. ambient temperature - 60 60 120 1 80 0.8 0.9 1.0 1.1 1.2 1.3 v ztn - relative voltage change t j - junction temperature (c) 240 95 9599 0 v ztn = v zt /v z (25 c) 0 tk vz = 10 x 10 -4 /k 8 x 10 -4 /k 2 x 10 -4 /k 6 x 10 -4 /k 4 x 10 -4 /k - 4 x 10 -4 /k - 2 x 10 -4 /k 0 120 160 0 100 300 400 500 600 p tot - total power dissipation (mw) t amb - ambient temperat ure (c) 200 95 9602 200 80 40
ratings and characteristic curves (1n5221b thru 1n5263b) figure 5. temperature coefficient of vz vs. z-voltage figure 6. diode capacitance vs. z-voltage figure 7. forward current vs. forward voltage 30 - 5 0 5 10 15 v z - z-voltage (v) 50 95 9600 40 i z = 5 ma 10 20 0 tk vz - temperat ure coefficient of v z (10 -4 /k) 10 15 0 50 100 150 200 c d - diode capacitance (pf) v z - z-voltage (v) 25 95 9601 20 t j = 25 c v r = 2 v 0 5 0 0.2 0.4 0.6 0. 8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i f - forward current (ma) v f - forward voltage (v) t j = 25 c figure 8. z-current vs. z-voltage figure 9. z-current vs. z-voltage figure 10. differential z-resistance vs. z-voltage 8 20 95 9604 0 20 40 60 80 100 i z - z-current (ma) p tot = 500 mw t amb = 25 c 046 12 v z - z-voltage (v) 15 20 25 30 0 10 20 30 40 50 i z - z-current (ma) v z - z-voltage (v) 35 95 9607 p tot = 500 mw t amb = 25 c 0 5 10 15 20 1 10 100 1000 ( ) 25 95 9606 tj = 25 c i z = 1 ma 5 ma 10 ma v z - z-v oltage ( v) r z - differiential z-resistance
ratings and characteristic curves (1n5221b thru 1n5263b) figure 11. thermal response 1 10 100 1000 z? thermal resistance for pu lse cond. (kw ) thp t p ? p u lse length (ms) 95 9603 10 -1 10 0 10 1 10 2 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 single pu lse r thja = 300 k/w t = t jm ax ?t amb i zm = (?v z +(v z 2 +4r zj t/z th p ) 1/ 2 )/(2r zj ) x
electrical characteristics (ratings at ta=25 o c ambient temperature unless otherwise specified). device v z @ i zt current z zt @ i zt z zk @i zk =0.25m a i r @ v r v oltage i zt ua v r nominal (ma) max. max. max. (volts) 1n5221b 2.4 20 30 1200 100 1.0 1n5222b 2.5 20 30 1250 100 1.0 1n5223b 2.7 20 30 1300 75 1.0 1n5224b 2.8 20 30 1400 75 1.0 1N5225B 3.0 20 29 1600 50.0 1.0 1n5226b 3.3 20 28 1600 25.0 1.0 1n5227b 3.6 20 24 1700 15.0 1.0 1n5228b 3.9 20 23 1900 10.0 1.0 1n5229b 4.3 20 22 2000 5.0 1.0 1n5230b 4.7 20 19 1900 5.0 2.0 1n5231b 5.1 20 17 1600 5.0 2.0 1n5232b 5.6 20 11 1600 5.0 3.0 1n5233b 6.0 20 7 1600 5.0 3.5 1n5234b 6.2 20 7 1000 5.0 4.0 1n5235b 6.8 20 5 750 3.0 5.0 1n5236b 7.5 20 6 500 3.0 6.0 1n5237b 8.2 20 8 500 3.0 6.5 1n5238b 8.7 20 8 600 3.0 6.5 1n5239b 9.1 20 10 600 3.0 7.0 1n5240b 10 20 17 600 2.0 8 1n5241b 11 20 22 600 1.0 8.4 1n5242b 12 20 30 600 0.5 9 1n5243b 13 9.5 13 600 0.1 10 1n5244b 14 9.0 15 600 0.1 10 1n5245b 15 8.5 16 600 0.1 11 1n5246b 16 7.8 17 600 0.1 12 1n5247b 17 7.4 19 600 0.1 13 1n5248b 18 7.0 21 600 0.1 14 1n5249b 19 6.6 23 600 0.1 14 1n5250b 20 6.2 25 600 0.1 15 1n5251b 22 5.6 29 600 0.1 17 1n5252b 24 5.2 33 600 0.1 18 1n5253b 25 5.0 35 600 0.1 19 1n5254b 27 4.6 41 600 0.1 21 1n5255b 28 4.5 44 600 0.1 21 1n5256b 30 4.2 49 600 0.1 23 1n5257b 33 3.8 58 700 0.1 25 1n5258b 36 3.4 70 700 0.1 27 1n5259b 39 3.2 80 800 0.1 30 1n5260b 43 3.0 93 900 0.1 33 1n5261b 47 2.7 105 1000 0.1 36 1n5262b 51 2.5 125 1100 0.1 39 1n5263b 56 2.2 150 1300 0.1 43 notes: 1. the t yp e numbers listed have zener volta g e as whown and have a standard tolerance on the nominal zener volta g e of 5%. device of 2% is indicated b y a "c" instead of a "b". 2. nominal zener volta g es between the volta g es shown and ti g hter volta g e, for detalied information on p rice, availabilit y and deliver y . 3. the zener volta g e (v z ) is tested under pulse condition. the measured v z is g uaranteed to be within s p ecification with device j unction in thermal e q uilibrium. 4. zener im p edance is derived from the 60-c y cle ac volta g e, which results when an ac current havin g an rms value equal to 10% of the dc zener current ( i zt ) is superimposed to i zt . version: a07


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